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Effect of the Critical and Operational Temperatures on the Sensitivity of MgB2 HEB Mixers

Evgenii Novoselov (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Stella Bevilacqua (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Sergey Cherednichenko (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Hiroyuki Shibata ; Yasuhiro Tokura
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY (2156-342X). Vol. 6 (2016), 2, p. 238-277.
[Artikel, refereegranskad vetenskaplig]

In this paper, we present a study of the noise and the gain of MgB hot-electron bolometer mixers with different critical temperatures and at various operation temperatures. At a local oscillator (LO) frequency of 1.63 THz the minimum input receiver noise temperature was 700 K with a gain of 18 dB for a device with a of 8.5 K. For a device with a of 22.5 K the corresponding values were 1700 K and 19 dB. For the latter device the was 2150 K at a bath temperature of 12 K, which is not achievable with Nb-compound based HEB mixers. We present and compare different methods for measurements of the HEB mixer gain and the output noise.

Nyckelord: Bolometer, conversion gain, hot-electron bolometer (HEB), MgB2 film , noise temperature, sub-mm astronomy, THz mixer.



Denna post skapades 2016-03-24. Senast ändrad 2016-08-18.
CPL Pubid: 233684

 

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