CPL - Chalmers Publication Library
| Utbildning | Forskning | Styrkeområden | Om Chalmers | In English In English Ej inloggad.

A High Voltage mm-wave Stacked HEMT Power Amplifier in 0.1 mu m m InGaAs Technology

M. Gavell ; Iltcho Angelov (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; M. Ferndahl ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
2015 Ieee Mtt-S International Microwave Symposium (0149-645X). (2015)
[Konferensbidrag, refereegranskat]

A stacked HEMT PA has been designed and implemented in a commercial 0.1 mu m InGaAs pHEMT process to increase gain and output power at mm-waves. Measurements on the 3-stage PA with parallel devices verify saturated output power of 25 dBm and maximum PAE of 15 % at 61 GHz, which is the highest reported output power of similar designs and topologies. The chip size measures 3.2 mm(2) which makes this the most power dense V-band amplifier reported from GaAs with 100 mW/mm(2).

Nyckelord: PA, GaAs, Stacked, FET, HEMT, Power Amplifier, mm-wave, V-band, MMIC

Article number 7166754

Denna post skapades 2016-03-23. Senast ändrad 2017-03-21.
CPL Pubid: 233617


Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur