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20-Gb/s Modulation of Silicon-Integrated Short-Wavelength Hybrid-Cavity VCSELs

Emanuel P. Haglund (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Sulakshna Kumari ; Petter Westbergh (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Johan S. Gustavsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Roel G. Baets ; Gunther Roelkens ; Anders Larsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
IEEE Photonics Technology Letters (1041-1135). Vol. 28 (2016), 8, p. 856 - 859 .
[Artikel, refereegranskad vetenskaplig]

We investigate the dynamics of silicon-integrated 850-nm-wavelength hybrid-cavity vertical-cavity surface-emitting lasers (VCSELs). The VCSELs consist of a GaAs-based half-VCSEL attached to a dielectric distributed Bragg reflector on a silicon substrate using ultra-thin divinylsiloxane-bis-benzocyclobutene adhesive bonding. A 5-µm oxide aperture diameter VCSEL, with a small signal modulation bandwidth of 11 GHz, supports data transmission at bit rates up to 20 Gb/s. The modulation bandwidth and the large signal modulation characteristics are found to be impaired by the high thermal impedance.

Nyckelord: High-speed modulation, large signal modulation, optical interconnects, semiconductor lasers, silicon photonics, vertical-cavity surface-emitting laser (VCSEL)



Denna post skapades 2016-03-15. Senast ändrad 2016-04-21.
CPL Pubid: 233262

 

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