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Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL

Emanuel P. Haglund (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Sulakshna Kumari ; Petter Westbergh (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Johan S. Gustavsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Gunther Roelkens ; Roel Baets ; Anders Larsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Vertical-Cavity Surface-Emitting Lasers XX, San Francisco, California, United States, 17-18 February 2016 (0277-786X). Vol. 9766 (2016),
[Konferensbidrag, refereegranskat]

We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs-based “half-VCSEL” is attached to a dielectric distributed Bragg reflector on silicon using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAs- and the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of 5 μm and a threshold current of 0.4 mA provides 0.6 mW output power at 845 nm. The VCSEL exhibits a modulation bandwidth of 11 GHz and can transmit data up to 20 Gbps.

Nyckelord: High-speed modulation, large signal modulation, optical interconnects, semiconductor lasers, silicon photonics, vertical-cavity surface-emitting laser (VCSEL).

Article Number: 976607

Denna post skapades 2016-03-07. Senast ändrad 2016-08-22.
CPL Pubid: 232868


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