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Zero-Bias Self-Switching In65Ga35As channel Diodes for Terahertz Detection,

Andreas Westlund (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Per-Åke Nilsson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; P. Sangaré ; G. Ducournau ; C. Gaquière ; Jan Grahn (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
IEEE International Conference on Indium Phosphide and Related Materials Conference Proceedings 2015 Vol. CSW 2015 (2015), p. 82-83.
[Konferensbidrag, refereegranskat]

An alternative to the transistor for high-frequency detector applications is the two-terminal self-switching diode (SSD). The SSD is based on a nanometer-wide channels and a lateral gate connected to a drain. SSDs with In65Ga35As channels were fabricated and characterized. The design was optimized for low noise detection. In on-wafer measurements 2-315 GHz, a responsivity >150 V/W and noise-equivalent power (NEP) 50-100 pW/Hz½ was measured with a 50 Ω source. In the measured frequency range, this is the lowest NEP for SSDs demonstrated.

Nyckelord: Self-switching diode, InGaAs, NEP

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Denna post skapades 2016-01-22.
CPL Pubid: 231137