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Intrinsically switchable bulk acoustic wave resonators based on paraelectric films

Andrei Vorobiev (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Spartak Gevorgian (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik )
2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014, Rome, Italy, 6-9 October 2014 p. 347-350. (2014)
[Konferensbidrag, refereegranskat]

The concept of the frequency switching in the composite bulk acoustic wave (BAW) resonators based on the thin films of the paraelectric-phase ferroelectrics is demonstrated experimentally for the first time. The composite BAW resonators based on the Ba0.25Sr0.75TiO3/SrRuO3/Ba0.25Sr0.75TiO3 multilayer structure are fabricated and characterized. It is shown that the resonance frequency of the BAW resonators can be switched more than two times (from 3.6 GHz to 7.7 GHz) by changing polarity of the 5 V dc bias voltage at the one of the ferroelectric layers. The composite BAW resonators performance is analyzed using the theory of the dc field induced piezoelectric effect in the paraelectric-phase ferroelectrics.

Nyckelord: ferroelectric films, film bulk acoustic resonators, frequency control, tunable circuits and devices


Article number 6986441



Denna post skapades 2016-01-18. Senast ändrad 2016-07-05.
CPL Pubid: 230859

 

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