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Atom probe tomography of a Ti-Si-Al-C-N coating grown on a cemented carbide substrate

Mattias Thuvander (Institutionen för teknisk fysik, Materialens mikrostruktur ) ; Gustaf Östberg (Institutionen för teknisk fysik, Materialens mikrostruktur ) ; M. Ahlgren ; Lena K. L. Falk (Institutionen för teknisk fysik, Materialens mikrostruktur )
Ultramicroscopy (0304-3991). Vol. 159 (2015), p. 308-313.
[Artikel, refereegranskad vetenskaplig]

The elemental distribution within a Ti-Si-Al-C-N coating grown by physical vapour deposition on a Crdoped WC-Co cemented carbide substrate has been investigated by atom probe tomography. Special attention was paid to the coating/substrate interface region. The results indicated a diffusion of substrate binder phase elements into the Ti-N adhesion layer. The composition of this layer, and the Ti-Al-N interlayer present between the adhesion layer and the main Ti-Si-Al-C-N layer, appeared to be sub-stoichiometric. The analysis of the interlayer showed the presence of internal surfaces, possibly grain boundaries, depleted in Al. The composition of the main Ti-Al-Si-C-N layer varied periodically in the growth direction; layers enriched in Ti appeared with a periodicity of around 30 nm. Laser pulsing resulted in a good mass resolution that made it possible to distinguish between N+ and Si2+ at 14 Da.

Nyckelord: Atom probe tomography, Physical vapour deposition, Nitrides, Diffusion, Cemented carbide cutting tools



Denna post skapades 2016-01-14. Senast ändrad 2016-10-17.
CPL Pubid: 230614

 

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Institutioner (Chalmers)

Institutionen för teknisk fysik, Materialens mikrostruktur (2012-2015)

Ämnesområden

Övrig teknisk materialvetenskap

Chalmers infrastruktur