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Symmetry based nonlinear model for GaN HEMTs

Ankur Prasad (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Mattias Thorsell (GigaHertz Centrum ; Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Klas Yhland ; Christian Fager (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum)
10th European Microwave Integrated Circuits Conference (EuMIC), 2015 p. 85-88. (2015)
[Konferensbidrag, refereegranskat]

This paper presents a new nonlinear transistor model based on a symmetrical small-signal model for GaN HEMTs. The intrinsic symmetry reflected into the small signal equivalent circuit is used to build a new model to describe the nonlinear behavior of the device. The model consists of a new nonlinear charge expression with only 6 parameters, while the nonlinear current expression is extended from an existing model to enable validity in both the positive and negative Vds region. Therefore, it can be used for transistors in switches, resistive mixers as well as amplifiers. The model is validated with both small-signal and nonlinear measurements showing good agreements.

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Denna post skapades 2016-01-07. Senast ändrad 2016-05-04.
CPL Pubid: 229992


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