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The influence of the gate leakage current and the gate resistance on the noise and gain performances of 90-nm CMOS for micro- and millimeter-wave frequencies

Hans-Olof Vickes ; Mattias Ferndahl (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Anowar Masud (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Microwave Symposium Digest , 2004 IEEE MTT-S International (0149-645X). Vol. 2 (2004), p. 971-974.
[Artikel, refereegranskad vetenskaplig]

We report the experimental and theoretical evaluation of the noise and the high frequency gain performances applied to a very short channel 90-nm CMOS transistor. We show that gate leakage currents modify the behavior of the noise parameters Rn, Fmin and Zopt only in the low gigahertz range. The gate resistance, Rg, on the contrary, have influence on the noise performance over the complete frequency range. Noise parameters have been measured in the frequency range 2-26 GHz and the S-parameters have been measured up to 62.5 GHz. The proposed model has been used in the design of a 2-stage 40 GHz amplifier.

Denna post skapades 2006-10-13. Senast ändrad 2017-03-21.
CPL Pubid: 22790