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Nitrogen Incorporation in GaNAs Layers Grown by Molecular Beam Epitaxy

Qingxiang Zhao ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Mahdad Sadeghi (Institutionen för mikroteknologi och nanovetenskap, Nanotekniklaboratoriet) ; Anders Larsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Milan Friesel ; Magnus Willander
Applied Physics Letters (0003-6951). Vol. 89 (2006), p. 031907.
[Artikel, refereegranskad vetenskaplig]

GaNAs/GaAs quantum wells with high N concentrations, grown by molecular beam epitaxy, have been investigated by secondary-ion mass spectrometry (SIMS), high resolution x-ray diffraction (XRD), and photoluminescence (PL) measurements. The substitutional N concentration in an 18 nm thick strained GaNAs layer varies from 1.4% to 5.9% when the growth rate is reduced from 1 to 0.2 µm/h. By further reducing the growth rate, more N can be incorporated but relaxation occurs. Both the total N concentration, deduced from SIMS measurements, and the substitutional N concentration, deduced from XRD measurements, increase with reduced growth rate. By comparing the SIMS and XRD results, we found that a large amount of N was not in substitutional position when the substitutional N concentration is high (>4%). The experimental results also show that there is no detectable change of total and substitutional N concentrations, within the instrument resolutions, after rapid thermal annealing at 700 °C for 30 s. However, PL measurements show a strong blueshift of the emission wavelength after annealing and the PL intensity increases by more than one order of magnitude.

Denna post skapades 2006-10-05. Senast ändrad 2016-04-11.
CPL Pubid: 22671


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Institutioner (Chalmers)

Institutionen för fysik (GU) (GU)
Institutionen för mikroteknologi och nanovetenskap, Fotonik
Institutionen för mikroteknologi och nanovetenskap, Nanotekniklaboratoriet



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