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Effect of ferroelectric substrate on carrier mobility in graphene field-effect transistors

Samina Bidmeshkipour ; Andrei Vorobiev (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Michael Andersson (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Ahmad Kompany ; Jan Stake (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik )
Applied Physics Letters (0003-6951). Vol. 107 (2015), 17, p. Article Number: 173106.
[Artikel, refereegranskad vetenskaplig]

Effect of LiNbO3 ferroelectric substrate on the carrier mobility in top gated graphene field-effect transistors (G-FETs) is demonstrated. It is shown that, at the same residual concentration of the charge carriers, the mobility in the G-FETs on the LiNbO3 substrate is higher than that on the SiO2/ Si substrate. The effect is associated with reduction of Coulomb scattering via screening the charged impurity field by the field induced in the ferroelectric substrate, but significant only for mobilities below 1000 cm2/V s. Raman spectra analysis and correlations established between mobility and microwave loss tangent of the Al2O3 gate dielectric indicate that the charged impurities are located predominantly at the gate dielectric and/or at the gate dielectric/graphene interface and are likely associated with oxygen vacancies.

Nyckelord: graphene, ferroelectric, field-effect transistor, carrier mobility, gate dielectric



Denna post skapades 2015-11-02. Senast ändrad 2016-04-28.
CPL Pubid: 225186

 

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Projekt

Denna publikation är ett resultat av följande projekt:


Graphene-Based Revolutions in ICT And Beyond (GRAPHENE) (EC/FP7/604391)