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Catalyst-free vapour-solid technique for deposition of Bi2Te3 and Bi2Se3 nanowires/nanobelts with topological insulator properties

J. Andzane ; Gunta Kunakova (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; Sophie Charpentier (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; V. Hrkac ; L. Kienle ; M. Baitimirova ; Thilo Bauch (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; Floriana Lombardi (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; D. Erts
Nanoscale (2040-3364). Vol. 7 (2015), 38, p. 15935-15944.
[Artikel, refereegranskad vetenskaplig]

We present a simple two-stage vapour-solid synthesis method for the growth of bismuth chalcogenide (Bi2Te3, Bi2Se3) topological insulator nanowires/nanobelts by using Bi2Se3 or Bi2Te3 powders as source materials. During the first stage of the synthesis process nanoplateteles, serving as "catalysts" for further nanowire/nanobelt growth, are formed. At a second stage of the synthesis, the introduction of a N-2 flow at 35 Torr pressure in the chamber induces the formation of free standing nanowires/nanobelts. The synthesised nanostructures demonstrate a layered single-crystalline structure and Bi : Se and Bi : Te ratios 40 : 60 at% for both Bi2Se3 and Bi2Te3 nanowires/nanobelts. The presence of Shubnikov de Haas oscillations in the longitudinal magneto-resistance of the nanowires/nanobelts and their specific angular dependence confirms the existence of 2D topological surface states in the synthesised nanostructures.

Denna post skapades 2015-10-21. Senast ändrad 2015-11-02.
CPL Pubid: 224571


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Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik



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