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Effect of photon-assisted Andreev reflection in the accuracy of a SINIS turnstile

Angelo Di Marco (Institutionen för mikroteknologi och nanovetenskap, Tillämpad kvantfysik) ; V. F. Maisi ; F. W. J. Hekking ; J. P. Pekola
Physical Review B. Condensed Matter and Materials Physics (1098-0121). Vol. 92 (2015), 9,
[Artikel, refereegranskad vetenskaplig]

We consider a hybrid single-electron transistor constituted by a gate-controlled normal-metal island (N) connected to two voltage-biased superconducting leads (S) by means of two tunnel junctions (SINIS), operated as a turnstile. We show that the exchange of photons between this system and the high-temperature electromagnetic environment where it is embedded enhances Andreev reflection, thereby limiting the single-electron tunneling accuracy.

Denna post skapades 2015-10-21. Senast ändrad 2015-11-19.
CPL Pubid: 224520


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Tillämpad kvantfysik



Chalmers infrastruktur