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Optimized Design of a Dual-Band Power Amplifier With SiC Varactor-Based Dynamic Load Modulation

Cesar Sánchez-Pérez (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Mustafa Özen (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; C. M. Andersson ; Dan Kuylenstierna (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Christian Fager (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
IEEE transactions on microwave theory and techniques (0018-9480). Vol. 63 (2015), 8, p. 2579-2588.
[Artikel, refereegranskad vetenskaplig]

A new methodology for the design of single/multi-band power amplifiers (PAs) with dynamic load modulation (DLM) is presented. First, the topology for the output matching network (OMN) including the control varactor is selected. A comprehensive optimization of the OMN parameters is then developed by which varactor and transistor losses are considered to ensure maximum efficiency enhancement at each frequency. To verify the method, a dual-band PA with DLM is realized. Drain efficiencies of 75% and 60% at 685 MHz and 1.84 GHz, respectively, are measured at peak output power. At 10-dB output power back-off efficiencies of 43.5% and 49.5%, respectively, are obtained. Linearized modulated measurements with a 6.5-dB peak-to-average power ratio WCDMA signal show average drain efficiencies of 56% and 54% at 685 MHz and 1.84 GHz, respectively, at an adjacent channel leakage ratio of -49 and -47.5 dBc, respectively. The proposed method shows the effectiveness of applying an optimization process for the design of single-or multi-band DLM PAs. The results demonstrate that near-optimum performance may be obtained in terms of efficiency enhancement for a given transistor and varactor-based OMN, thus making DLM competitive against other load modulation techniques.

Nyckelord: Dual band, dynamic load modulation (DLM), gallium-nitride (GaN), high efficiency, power amplifier (PA), silicon-carbide (SiC), tunable matching network, varactor


Article number 7177154



Denna post skapades 2015-09-11. Senast ändrad 2015-12-17.
CPL Pubid: 222279

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik

Ämnesområden

Elektroteknik och elektronik

Chalmers infrastruktur