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The effect of bilayer regions on the response of epitaxial graphene devices to environmental gating

R. E. Hill-Pearce ; V. Eless ; Arseniy Lartsev (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; N. A. Martin ; I. L. Barker Snook ; J. J. Helmore ; R. Yakimova ; J. C. Gallop ; L. Hao
Carbon (0008-6223). Vol. 93 (2015), p. 896-902.
[Artikel, refereegranskad vetenskaplig]

The effect of a bilayer area on the electronic response to environmental gating of a monolayer graphene Hall bar device is investigated using room temperature magnetotransport and scanning Kelvin probe microscopy measurements in a controlled environment. The device is tuned through the charge neutrality point with n-p-n-junctions formed. Scanning Kelvin probe measurements show that the work function of the monolayer graphene decreases more than that of the bilayer area however magnetotransport measurements show a larger change in carrier concentration for bilayer graphene with environmental gating. Interface scattering at the boundary between the monolayer and bilayer regions also affects device response with field-dependent suppression of the conductivity observed near the charge neutrality point. Simultaneous electronic and environmental scanning Kelvin probe measurements are used to build nano-scale maps of the work function of the device surface revealing the areas of greatest work function change with environmental gating.



Denna post skapades 2015-08-31. Senast ändrad 2015-09-18.
CPL Pubid: 221518

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik

Ämnesområden

Materialteknik

Chalmers infrastruktur

 


Projekt

Denna publikation är ett resultat av följande projekt:


Graphene-Based Revolutions in ICT And Beyond (GRAPHENE) (EC/FP7/604391)