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Bismuth Effects on Electronic Levels in GaSb(Bi)/AlGaSb Quantum Wells Probed by Infrared Photoreflectance

X. R. Chen ; Y. X. Song ; L. Q. Zhu ; Z. Qi ; L. Zhu ; F. X. Zha ; S. L. Guo ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; J. Shao
Chinese Physics Letters Vol. 32 (2015), 6,
[Artikel, refereegranskad vetenskaplig]

GaSb(Bi)/Al0.2Ga0.8Sb single quantum wells are characterized by a Fourier transform infrared spectrometerbased photoreflectance method at 77 K. Spatially direct and indirect transitions between the electronic levels at and above the effective band gap are well resolved. The shifts of the electronic levels with Bi incorporation are identified quantitatively. The results show that the upshift of the valence band edge is clarified to be dominant, while the Bi-induced downshift of the conduction band edge does exist and contributes to the band gap reduction in the GaSbBi quantum-well layer by (29±6)%.

Denna post skapades 2015-08-21. Senast ändrad 2015-09-17.
CPL Pubid: 220992


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik



Chalmers infrastruktur