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Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy

X.Y. Wu ; K. Wang ; W.W. Pan ; P. Wang ; Y.Y. Li ; Y.X. Song ; Y. Gu ; L. Yue ; H. Xu ; Z.P. Zhang ; J. Cui ; Q. Gong ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Semiconductor Science and Technology (0268-1242). Vol. 30 (2015), 9,
[Artikel, refereegranskad vetenskaplig]

The effect of post-growth rapid thermal annealing on structural and optical properties of InP1-xBix thin films was investigated. InPBi shows good thermal stability up to 500 °C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 °C. The InPBi sample annealed at 800 °C shows an unexpected PL spectrum with different energy transitions.

Nyckelord: eep level , hermal annealing , hermal tability , hotoluminescence , ilute bismides , InPBi

Denna post skapades 2015-07-27. Senast ändrad 2015-07-31.
CPL Pubid: 219986


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