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Raman scattering studies of dilute InP1-xBix alloys reveal unusually strong oscillator strength for Bi-induced modes

W. Pan ; J.A. Steele ; P. Wang ; K. Wang ; Y. Song ; L. Yue ; X. Wu ; H. Xu ; Z. Zhang ; S. Xu ; P. Lu ; L. Wu ; Q. Gong ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Semiconductor Science and Technology (0268-1242). Vol. 30 (2015), 9,
[Artikel, refereegranskad vetenskaplig]

Room-temperature Raman scattering studies of new InP1-xBix alloys grown by molecular beam epitaxy are reported. Two new Bi-induced vibrations observed at 149 and 171 cm-1 are assigned to InBi-like TO and LO phonon modes, respectively, and exhibit an unusually strong intensity for the dilute regime. Two additional modes at 311 and 337 cm-1 are resolved as well with unknown origins. The Raman intensities of the InBi-like TO and LO bands, as well as the new mode at 337 cm-1, exhibit strong and linear dependence on the Bi concentration for the composition range studied, 0.003 ≤ x ≤ 0.023. This correlation may serve as a fast and convenient means of characterizing bismuth composition not only in the ternary alloy InP1-xBix but also in the quaternaries such as In1-yGayP1-xBix and In1-yAlyP1-xBix.

Nyckelord: dilute bismides , InPBi , molecular beam epitaxy , oscillator strength , Raman scattering

Denna post skapades 2015-07-27. Senast ändrad 2015-07-31.
CPL Pubid: 219985


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Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



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