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Natural patterning of templates on GaAs by formation of cracks

Y. Song ; H. Xu ; Y. Li ; Mahdad Sadeghi (Institutionen för mikroteknologi och nanovetenskap, Nanotekniklaboratoriet) ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
AIP Advances (2158-3226). Vol. 5 (2015), 6, p. Art Nr 067146.
[Artikel, refereegranskad vetenskaplig]

Substrate pre-patterning is an effective way to overcome large lattice mismatch and suppress threading defects in the growth of heterostructures. In this work, a new concept was proposed to form natural patterns on commercial substrates monolithically by the formation of surface cracks. Tensile strain was intentionally brought in with a GaAs or GaNAs layer above an InGaAs layer on GaAs substrates. Surface crack patterns successfully formed during the strain relaxation. The strain in a 1 μm buffer layer atop the pattern was found effectively relaxed. Detailed residual strain distribution was simulated by the finite element method.

Denna post skapades 2015-07-21. Senast ändrad 2016-07-22.
CPL Pubid: 219894


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