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Wavelength tuning of InAs quantum dot laser by micromirror device

J. Y. Yan ; Q. Gong ; C. Z. Kang ; H. X. Xu ; C. F. Cao ; Y. Y. Li ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; H. L. Wang
Journal of Crystal Growth (0022-0248). Vol. 425 (2015), p. 373-375.
[Artikel, refereegranskad vetenskaplig]

We report on the InAs quantum dot (QD) external cavity laser (ECL) using a digital mirror device (DMD) as the key component for wavelength tuning. The InAs QD laser diode was grown by gas source molecular-beam epitaxy, which had a broad gain profile. Single mode operation was achieved with the side mode suppression ratio of 21 dB when the optical feedback was provided by a mirror pattern consisting of 9 micromirrors. Moreover, two-color lasing was demonstrated with two laser lines having frequency difference in the THz range. The incorporation of DMD in the ECL enables great flexibility and many unique features, such as high tuning speed independent of the tuning step, two-color or multicolor lasing, and adjustable intensity for individual laser lines. (C) 2015 Elsevier B.V. All rights reserved.

Nyckelord: Molecular beam epitaxy, Gallium compounds, Semiconducting Gallium Arsenide, Laser diode, Crystallography, Materials Science, Multidisciplinary, Physics, Applied

Denna post skapades 2015-07-16.
CPL Pubid: 219761


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