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Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

Sebastian Gustafsson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; J. T. Chen ; Johan Bergsten (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; U. Forsberg ; Mattias Thorsell (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; E. Janzen ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
IEEE Transactions on Electron Devices (0018-9383). Vol. 62 (2015), 7, p. 2162-2169.
[Artikel, refereegranskad vetenskaplig]

Aluminium gallium nitride (AlGaN)/GaN high-electron mobility transistor performance is to a large extent affected by the buffer design, which, in this paper, is varied using different levels of carbon incorporation. Three epitaxial structures have been fabricated: 1) two with uniform carbon doping profile but different carbon concentration and 2) one with a stepped doping profile. The epitaxial structures have been grown on 4H-SiC using hot-wall metal-organic chemical vapor deposition with residual carbon doping. The leakage currents in OFF-state at 10 V drain voltage were in the same order of magnitude (10(-4) A/mm) for the high-doped and stepped-doped buffer. The high-doped material had a current collapse (CC) of 78.8% compared with 16.1% for the stepped-doped material under dynamic I-V conditions. The low-doped material had low CC (5.2%) but poor buffer isolation. Trap characterization revealed that the high-doped material had two trap levels at 0.15 and 0.59 eV, and the low-doped material had one trap level at 0.59 eV.

Nyckelord: Current collapse (CC), dispersion, gallium nitride (GaN), high-electron mobility transistor (HEMT), trap levels



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Denna post skapades 2015-07-10. Senast ändrad 2016-12-20.
CPL Pubid: 219669

 

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