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The potential for sensitivity enhancement by the thermoelectric effect in carbon-nanotube and graphene Tera-FETs

Maris Bauer ; Michael Andersson (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Audrey Zak (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Paulius Sakalas ; Dovilė Čibiraitė ; Alvydas Lisauskas ; Michael Schröter ; Jan Stake (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Hartmut Roskos
Proceedings of the 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON’19), Salamanca, Spain; 29 june-2 july, 2015 (1742-6588). Vol. 647 (2015), p. UNSP 012004.
[Konferensbidrag, refereegranskat]

We report on terahertz (THz) measurements with graphene field-effect transistors with integrated antennas (Tera-FETs) lay special emphasis on thermoelectric contributions to the detected THz photoresponse. Graphene Tera-FETs with integrated broad-band bow-tie antennas were fabricated in a CVD-based growth process and were successfully applied for detection at 600 GHz with optical NEPs down to 515 pW/Hz^1/2. While rectification of THz radiation by (distributed) resistive mixing of charge-density waves induced in the gated transistor channel region is well known, significant additional contributions to the detected signal have experimentally been observed and hot-carrier thermoelectric effects have been identified as a possible origin of these signals. We also observe similar signal contributions in carbonnanotube transistors.

Nyckelord: Graphene field effect transistors, direct terahertz detection, CVD graphene, antenna-integrated detectors


19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON '19)



Denna post skapades 2015-06-30. Senast ändrad 2016-09-16.
CPL Pubid: 219153

 

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