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Thermoelectric properties of SnSe compound

X. H. Guan ; P. F. Lu ; L. Y. Wu ; L. H. Han ; G. Liu ; Y. X. Song ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Journal of Alloys and Compounds (0925-8388). Vol. 643 (2015), p. 116-120.
[Artikel, refereegranskad vetenskaplig]

A first-principles study and Boltzmann transport theory have been performed to evaluate the electronic structure and thermoelectric properties of SnSe compound. The energy band structure and density of states are studied in detail. The electronic transport coefficients are then calculated as a function of chemical potential or temperature within the assumption of the constant relaxation time. The figure of merit ZT is obtained with the use of calculated thermoelectric properties and can reach as high as 1.87 along yy and 1.6 along zz direction at 800k. Our theoretical result agrees well with previous experimental data.

Nyckelord: SnSe, Electronic structure, Thermoelectric properties, Figure of merit

Denna post skapades 2015-06-24.
CPL Pubid: 218805


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik


Metallurgi och metalliska material

Chalmers infrastruktur