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Dielectric response of Ba0.05Sr0.95TiO3(110) films to variations in temperature and electric field

Y.A. Boikov ; Tord Claeson (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik)
Physics of the Solid State (1063-7834). Vol. 57 (2015), 5, p. 957-961.
[Artikel, refereegranskad vetenskaplig]

Three-layer epitaxial heterostructures, in which a 1000-nm-thick intermediate layer of Ba0.05Sr0.95TiO3 is integrated with strontium ruthenate conducting electrodes, have been grown by laser evaporation. Using photolithography and ion etching, film parallel-plate capacitors SrRuO3/Ba0.05Sr0.95TiO3/SrRuO3 are formed based on the grown heterostructures. A sharp maximum in the temperature dependence of the capacitor capacitance is observed at T ≈ 75 K. At T < 100 K, the capacitance decreases by 50–60% upon applying a bias voltage Vb = ±2.5 V to the oxide electrodes. The estimate of the specific capacitance (~2.1 μF/cm2) of the Ba0.05Sr0.95TiO3(110)/SrRuO3(110) interface is obtained. For T > 250 K and the measuring signal frequency of 1 kHz, the dielectric loss tangent of the film capacitors increases exponentially with increasing temperature.



Denna post skapades 2015-06-24. Senast ändrad 2015-07-07.
CPL Pubid: 218763

 

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