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Design and characterization of a negative resistance Common Emitter InP Double Heterojunction Bipolar Transistor subcircuit for millimeter wave and submillimeter wave applications

C. Poole ; I. Darwazeh ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Klas Eriksson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Dan Kuylenstierna (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Sz-Hau Lai (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014; Fiera di RomaRome; Italy; 6 October 2014 through 9 October 2014 p. 933-936. (2014)
[Konferensbidrag, refereegranskat]

A negative resistance Indium Phosphide MMIC subcircuit element is presented that employs a Double-Heterojunction Bipolar Transistor in Common Emitter configuration with series feedback. The fabricated MMIC exhibits negative resistance up to 231GHz, this being the highest known frequency at which negative resistance has been measured for a transistor in the Common Emitter configuration. The design methodology is based on a simple equation that accurately predicts the value of series feedback reactance required to generate negative resistance in a transistor. The negative resistance subcircuit described has potential application in a reflection amplifier or negative resistance oscillator, when combined with a suitable resonator.

Article number 6986589

Denna post skapades 2015-06-15. Senast ändrad 2017-03-21.
CPL Pubid: 218369


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