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InP DHBT Distributed Amplifiers With Up to 235-GHz Bandwidth

Klas Eriksson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; I. Darwazeh ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Ieee Transactions on Microwave Theory and Techniques (0018-9480). Vol. 63 (2015), 4, p. 1334-1341.
[Artikel, refereegranskad vetenskaplig]

Three wideband amplifiers in double-heterojunction bipolar transistor technology have been designed and measured. The amplifiers use different types of distributed amplifier (DA) topologies, all based on cascode gain cells. A single-stage DA design achieves 7.5-dB gain and 192-GHz bandwidth and a two-cascaded single-stage DA achieves an average gain of 16 dB with a bandwidth of 235 GHz. The third circuit is a conventional DA with more than 10-dB gain from 70 kHz up to 180 GHz. To the authors' best knowledge, the single-stage DA and the two-cascaded single-stage DA are the widest band amplifiers in any technology reported to date. Furthermore, the conventional DA has a record bandwidth for circuits in conventional DA topology with gain from near dc.

Nyckelord: Distributed amplifiers (DAs), heterojunction bipolar transistors (HBTs), indium-phosphide (InP), noise figure, wideband amplifiers

Denna post skapades 2015-06-15. Senast ändrad 2017-03-21.
CPL Pubid: 218361


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur