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Verification of electron doping in single-layer graphene due to H-2 exposure with thermoelectric power

S. J. Hong ; M. Park ; H. J. Kang ; M. Lee ; D. Soler-Delgado ; D. S. Shin ; K. H. Kim ; Sergey Kubatkin (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; D. H. Jeong ; Y. W. Park ; B. H. Kim
Applied Physics Letters (0003-6951). Vol. 106 (2015), 14,
[Artikel, refereegranskad vetenskaplig]

We report the electron doping of single-layer graphene (SLG) grown by chemical vapor deposition (CVD) by means of dissociative hydrogen adsorption. The transfer characteristic showed n-type doping behavior similar to that of mechanically exfoliated graphene. Furthermore, we studied the thermoelectric power (TEP) of CVD-grown SLG before and after exposure to high-pressure H-2 molecules. From the TEP results, which indicate the intrinsic electrical properties, we observed that the CVD-grown SLG is n-type doped without degradation of the quality after hydrogen adsorption. Finally, the electron doping was also verified by Raman spectroscopy.

Denna post skapades 2015-06-11. Senast ändrad 2015-07-09.
CPL Pubid: 218257


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik



Chalmers infrastruktur