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Tape-Assisted Transfer of Carbon Nanotube Bundles for Through-Silicon-Via Applications

Wei Mu (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem) ; Shuangxi Sun (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem) ; Di Jiang (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem) ; Yifeng Fu (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem) ; Michael Edwards (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem) ; Yong Zhang (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem) ; Kjell Jeppson (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem) ; Johan Liu (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem)
Journal of Electronic Materials (0361-5235). Vol. 2015 (2015), 17 April, p. http://dx.doi.org/10.1007/s11664-015-3752-2.
[Artikel, refereegranskad vetenskaplig]

Robust methods for transferring vertically aligned carbon nanotube (CNT) bundles into through-silicon vias (TSVs) are needed since CNT growth is not compatible with complementary metal–oxide–semiconductor (CMOS) technology due to the temperature needed for growing high-quality CNTs (∼700°C). Previous methods are either too complicated or not robust enough, thereby offering too low yields. Here, a facile transfer method using tape at room temperature is proposed and experimentally demonstrated. Three different kinds of tape, viz. thermal release tape, Teflon tape, and Scotch tape, were applied as the medium for CNT transfer. The CNT bundle was adhered to the tape through a flip-chip bonder, and the influence of the bonding process on the transfer results was investigated. Two-inch wafer-scale transfer of CNT bundles was realized with yields up to 97% demonstrated. After transfer, the use of several different polymers was explored for filling the gap between the transferred CNT bundle and the sidewalls of the TSV openings to improve the filling performance. The current–voltage characteristic of the CNT TSVs indicated good electrical performance, and by measuring the via resistance as a function of via thickness, contact resistances could be eliminated and an intrinsic CNT resistivity of 1.80 mΩ cm found.

Nyckelord: Carbon nanotube bundles, postgrowth transfer, TSV, polymer filling, resistivity



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Denna post skapades 2015-05-28. Senast ändrad 2016-02-19.
CPL Pubid: 217737

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Bionanosystem (2007-2015)

Ämnesområden

Nanovetenskap och nanoteknik
Nanoteknik

Chalmers infrastruktur

NFL/Myfab (Nanofabrication Laboratory)