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**Harvard**

Angelov, I., Avolio, G. och Schreurs, D. (2013) *Large-Signal Time-Domain Waveform-Based Transistor Modeling*.

** BibTeX **

@inbook{

Angelov2013,

author={Angelov, Iltcho and Avolio, G. and Schreurs, D.M.M.P.},

title={Large-Signal Time-Domain Waveform-Based Transistor Modeling},

booktitle={Microwave De-embedding: From Theory to Applications},

isbn={9780124017009},

pages={189-223},

abstract={Nonlinear models of microwave transistors are essential for the design of high-frequency nonlinear circuits, such as power amplifiers or mixers. Among the existing modeling techniques, measurement-based approaches have gained huge attention from researchers in the last decades. Especially, nonlinear measurements-driven model extraction is preferred for transistors exploited in the design of power amplifiers and mixers. This chapter mainly deals with the generation of empirical transistor models starting from large-signal time-domain waveforms. Specifically, a widely used model available in commercial CAD tools is adopted, and the extraction procedure of the model parameters is outlined in detail. Moreover the advantage of using time-domain waveforms at different frequencies is highlighted. More specifically, by making use of time-domain waveforms at frequencies in the kHz-MHz range, one can separately model the behavior of the transistor output current generator, which is more prone to low-frequency dispersive effects. In fact at low frequencies the effect of the nonlinear transistor capacitance is significantly reduced and, therefore, already "de-embedded" from the measured time-domain waveforms. Once the model of the output current generator is available, one can use high-frequency measurements to determine the nonlinear capacitances (or charges). Several modeling examples of different transistor technologies, such as gallium-arsenide and gallium-nitride, are reported. © 2014 Elsevier Ltd. All rights reserved.},

year={2013},

keywords={Empirical models , I-V functions , Large-signal measurements , Large-signal modeling , Microwave transistors , Q-V functions},

}

** RefWorks **

RT Book, Section

SR Electronic

ID 216662

A1 Angelov, Iltcho

A1 Avolio, G.

A1 Schreurs, D.M.M.P.

T1 Large-Signal Time-Domain Waveform-Based Transistor Modeling

YR 2013

T2 Microwave De-embedding: From Theory to Applications

SN 9780124017009

SP 189

OP 223

AB Nonlinear models of microwave transistors are essential for the design of high-frequency nonlinear circuits, such as power amplifiers or mixers. Among the existing modeling techniques, measurement-based approaches have gained huge attention from researchers in the last decades. Especially, nonlinear measurements-driven model extraction is preferred for transistors exploited in the design of power amplifiers and mixers. This chapter mainly deals with the generation of empirical transistor models starting from large-signal time-domain waveforms. Specifically, a widely used model available in commercial CAD tools is adopted, and the extraction procedure of the model parameters is outlined in detail. Moreover the advantage of using time-domain waveforms at different frequencies is highlighted. More specifically, by making use of time-domain waveforms at frequencies in the kHz-MHz range, one can separately model the behavior of the transistor output current generator, which is more prone to low-frequency dispersive effects. In fact at low frequencies the effect of the nonlinear transistor capacitance is significantly reduced and, therefore, already "de-embedded" from the measured time-domain waveforms. Once the model of the output current generator is available, one can use high-frequency measurements to determine the nonlinear capacitances (or charges). Several modeling examples of different transistor technologies, such as gallium-arsenide and gallium-nitride, are reported. © 2014 Elsevier Ltd. All rights reserved.

LA eng

DO 10.1016/B978-0-12-401700-9.00005-7

LK http://dx.doi.org/10.1016/B978-0-12-401700-9.00005-7

OL 30