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A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation

G. Avolio ; A. Raffo ; Iltcho Angelov (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; G. Crupi ; G. Vannini ; D.M.M.P. Schreurs
2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013; Seattle, WA; United States; 2 June 2013 through 7 June 2013 (0149-645X). p. Art. no. 6697394. (2013)
[Konferensbidrag, refereegranskat]

In this work we describe a novel technique for the extraction of nonlinear model for microwave transistors from nonlinear measurements obtained by simultaneously driving the device under test with low- and high-frequency excitations. Specifically, the large-signal operating point of the device is set by large-signal low-frequency excitations. On top of these a tickle tone at high-frequency is applied. In this way, one can separate the contributions of the IDS current source and the charge sources by a single measurement. The nonlinear model, based on equations available in commercial CAD tools, is extracted for a 0.15 μm GaAs pHEMT. Good agreement is obtained between model predictions and experimental data.

Nyckelord: I-V dynamic characteristics , Microwave FET , Nonlinear measurements , Nonlinear transistor model , Q-V characteristics

Denna post skapades 2015-05-05. Senast ändrad 2016-07-13.
CPL Pubid: 216472


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur