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Monte carlo analysis of impact ionization in isolated-gate InAs/AlSb high electron mobility transistors

B. G. Vasallo ; H. Rodilla ; T. González ; E. Lefebvre ; Giuseppe Moschetti (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Jan Grahn (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; J. Mateos
Acta Physica Polonica A. Proceedings of the 14th International Symposium Ultrafast Phenomena in Semiconductors, Vilnius 2010 (0587-4246). Vol. 119 (2011), 2, p. 222-224.
[Konferensbidrag, refereegranskat]

We perform a physical analysis of the kink effect in InAs/AlSb high electron mobility transistors by means of a semiclassical 2D ensemble Monte Carlo simulator. Due to the small bandgap of InAs, InAs/AlSb high electron mobility transistors are very susceptible to suffer from impact ionization processes, with the subsequent hole transport through the structure, both implicated in the kink effect. When the drain-to-source voltage VDS is high enough for the onset of impact ionization, holes generated tend to pile up at the gate-drain side of the buffer. This occurs due to the valence-band energy barrier between the buffer and the channel. Because of this accumulation of positive charge, the channel is further opened and the drain current I D increases, leading to the kink effect in the I-V characteristics.

Denna post skapades 2015-05-04. Senast ändrad 2016-08-18.
CPL Pubid: 216354


Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur



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