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Post-growth annealing of (Ga,Mn)As under Sb capping

Intikhab Ulfat (Institutionen för teknisk fysik, Fasta tillståndets fysik) ; Johan Adell (Institutionen för teknisk fysik, Fasta tillståndets fysik) ; P. Pal ; J. Sadowski ; Lars Ilver (Institutionen för teknisk fysik, Fasta tillståndets fysik) ; Janusz Kanski (Institutionen för teknisk fysik, Fasta tillståndets fysik)
4th International Conference on Mechanical and Electrical Technology, ICMET 2012, Kuala Lumpur, Malaysia, 24-26 July 2012 (1660-9336). Vol. 243-246 (2012), p. 243-246.
[Konferensbidrag, refereegranskat]

(Ga,Mn)As is a model diluted ferromagnet system in which the atomic spins of Mn ions are ferromagnetically arranged due to the exchange interaction with valence band holes. An important tecchnological concern regarding this system has been approaches that might result in reduction of the density of Mn interstitial and increase in the content of Mn in order to make the system practically feasible. To accomplish the objective we report the results of our recent synchrotron radiation based spectroscopic investigations concening annealing induced modification of as-grown (Ga,Mn)As layers covered with Sb capping.

Nyckelord: Annealing induced modifications , Ga Mn As , Synchrotron radiation

Denna post skapades 2015-05-04. Senast ändrad 2016-04-29.
CPL Pubid: 216207


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Institutionen för teknisk fysik, Fasta tillståndets fysik (2005-2015)


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