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On-axis homoepitaxial growth of 4H-SiC PiN structure for high power applications

J. ul Hassan ; I.D. Booker ; L. Lilja ; A. Hallén ; Martin Fagerlind (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; J.P. Bergman ; E. Janzén
Materials Science Forum (0255-5476). Vol. 740-742 (2013), p. 173-176.
[Artikel, refereegranskad vetenskaplig]

We demonstrate on-axis homoepitaxial growth of 4H-SiC(0001) PiN structure on 3-inch wafers with 100% 4H polytype in the epilayer excluding the edges. The layers were grown with a thickness of 105 μm and controlled n-type doping of 4 x 1014 cm-3.The epilayers were completely free of basal plane dislocations, in-grown stacking faults and other epitaxial defects, as required for 10 kV high power bipolar devices. Some part of the wafer had a lifetime enhancement procedure to increase lifetime to above 2 μs using carbon implantation. An additional step of epilayer polishing was adapted to reduce surface roughness and implantation damage.

Nyckelord: Carrier lifetime, Chemical vapor deposition, Growth mechanism, High power devices , On-axis

Denna post skapades 2015-04-29.
CPL Pubid: 216035


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



Chalmers infrastruktur