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Sodium enhanced oxidation: Absence of shallow interface traps after removal of sodium ions from the SiO2/4H-SiC interface

P.G. Hermannsson ; Fredrik Allerstam (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; S. Hauksson ; E.O. Sveinbjörnsson
Materials Science Forum (0255-5476). Vol. 740-742 (2013), p. 749-752.
[Artikel, refereegranskad vetenskaplig]

We investigate the strong passivation of shallow interface traps located near the SiC conduction band after enhanced oxidation of Si-face 4H-SiC in the presence of sodium. We find that removing the sodium ions present at the SiO2/SiC interface since oxidation by way of bias stress or annealing does not lead to a significant increase in the density of interface traps. The presence of sodium ions at the SiO2/SiC interface is therefore not responsible for the passivation of such interface traps in oxides formed by sodium enhanced oxidation.

Nyckelord: Interface states, MOS ,Sodium enhanced oxidation, TDRC

Denna post skapades 2015-04-29.
CPL Pubid: 216028


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Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



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