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Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

Anna Malmros (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; P. Gamarra ; M. A. di Forte-Poisson ; Hans Hjelmgren (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; C. Lacam ; Mattias Thorsell (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; M. Tordjman ; R. Aubry ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Ieee Electron Device Letters (0741-3106). Vol. 36 (2015), 3, p. 235-237.
[Artikel, refereegranskad vetenskaplig]

Al2O3 films deposited by thermal and plasma-assisted atomic layer deposition (ALD) were evaluated as passivation layers for InAlN/AlN/GaN HEMTs. As a reference, a comparison was made with the more conventional plasma enhanced chemical vapor deposition deposited SiNx passivation. The difference in sheet charge density, threshold voltage, f(T) and f(max) was moderate for the three samples. The gate leakage current differed by several orders of magnitude, in favor of Al2O3 passivation, regardless of the deposition method. Severe current slump was measured for the HEMT passivated by thermal ALD, whereas near-dispersion free operation was observed for the HEMT passivated by plasma-assisted ALD. This had a direct impact on the microwave output power. Large-signal measurements at 3 GHz revealed that HEMTs with Al2O3 passivation exhibited 77% higher output power using plasma-assisted ALD compared with thermal ALD.

Nyckelord: GaN HEMT, InAlN, passivation, ALD, Al2O3



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Denna post skapades 2015-04-13. Senast ändrad 2015-11-25.
CPL Pubid: 215156

 

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