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Nanochannel diodes based on InAs/Al80Ga20Sb heterostructures: Fabrication and zero-bias detector properties

Andreas Westlund (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Per-Åke Nilsson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; P. Sangaré ; G. Ducournau ; C. Gaquière ; L. Desplanque ; X. Wallart ; Jan Grahn (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Journal of Vacuum Science & Technology B (1071-1023). Vol. 33 (2015), 2, p. 021207.
[Artikel, refereegranskad vetenskaplig]

The authors present a novel process for fabrication of deep submicron isolation patterns in InAs/Al80Ga20Sb heterostructures. The process is demonstrated by processing InAs/Al80Ga20Sb self-switching diodes (SSDs). SSDs require high-resolution isolation patterns, which presents a major fabrication challenge because of the oxidation sensitivity of Al(Ga)Sb alloys. The presented fabrication process completely avoided exposure of Al(Ga)Sb to air and resulted in an isolation pattern with a feature size down to 35 nm. The process was based on a dry etch of isolating trenches, in situ removal of the resist etch mask followed by in situ encapsulation of etched surfaces by silicon nitride. The applicability of the InAs/Al80Ga20Sb SSD process was demonstrated with on-wafer RF measurements of zero-bias detection up to 315 GHz. Below 50 GHz, the detector's noise equivalent power was estimated to less than 100 pW/Hz½ .

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Denna post skapades 2015-03-31. Senast ändrad 2017-10-05.
CPL Pubid: 214620


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