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Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors

Andreas Westlund (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; P. Sangare ; G. Ducournau ; I. Iniguez-de-la-Torre ; Per-Åke Nilsson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; C. Gaquiere ; L. Desplanque ; X. Wallart ; J. F. Millithaler ; T. Gonzalez ; J. Mateos ; Jan Grahn (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Solid-State Electronics (0038-1101). Vol. 104 (2015), Feb, p. 79-85.
[Artikel, refereegranskad vetenskaplig]

Design optimization of the InAs self-switching diode (SSD) intended for direct zero-bias THz detection is presented. The SSD, which consists of nanometer-sized channels in parallel, was described using an equivalent small-signal circuit. Expressions for voltage responsivity and noise equivalent power (NEP) were derived in terms of geometrical design parameters of the SSD, i.e. the channel length and the number of channels. Modeled design dependencies were confirmed by RF and DC measurements on InAs SSDs. In terms of NEP, an optimum number of channels were found with the detector driven by a 50 Omega source. With a matched source, the model predicted a responsivity of 1900 V/W and NEP of 7.7 pW/Hz(1/2) for a single-channel InAs SSD with 35 nm channel width. Monte Carlo device simulations supported observed design dependencies. The proposed small-signal model can be used to optimize SSDs of any material system for low-noise and high-frequency operation as zero-bias detectors. In large signal measurements, the responsivity of the InAs SSDs exhibited a 1 dB deviation from linear responsivity at an input power of -3 dBm from a 50 Omega source.

Nyckelord: In As, Self-switching diode, Millimeter-wave, Terahertz, Detector, Small-signal modeling, Millimeter-wave detectors

Denna post skapades 2015-03-16. Senast ändrad 2015-03-31.
CPL Pubid: 213853


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Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



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Denna publikation ingår i:

Self-Switching Diodes for Zero-Bias Terahertz Detection



Denna publikation är ett resultat av följande projekt:

Semiconductor nanodevices for room temperature THz emission and detection (ROOTHZ) (EC/FP7/243845)