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Power load dependencies of cold electron bolometer optical response at 350 ghz

M.A. Tarasov ; V.S. Edelman ; A.B. Ermakov ; Sumedh Mahashabde (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; L.S. Kuzmin
25th International Sympsoium on Space Terahertz Technology, ISSTT 2014; Moscow; Russian Federation; 27 April 2014 through 30 April 2014 p. 35-41. (2014)
[Konferensbidrag, refereegranskat]

Cold electron bolometers integrated with twin-slot antennas have been designed and fabricated. Optical response was measured in 0.06-0.6 K temperature range using black body radiation source at temperature 2-15 K. The responsivity of 0.3109 V/W was measured at 2.7 K radiation temperature. The estimated ultimate dark responsivity at 100 mK can approach Sv=1010 V/W and reduces down to 1.1108 V/W at 300 mK for the sample with absorber volume of 510-20 m3. At high power load levels and low temperatures the changes of tunneling current, dynamic resistance and voltage response have been explained by non-thermal energy distribution of excited electrons. Distribution of excited electrons in such system is of none-Fermi type, electrons with energies of the order of 1 K tunnel from normal metal absorber to superconductor instead of relaxing down to thermal energy kTe. This effect can reduce quantum efficiency of bolometer from hf/kTph in ideal case down to single electron per signal quantum in the high power case.

Nyckelord: bolometers; nanofabrication; slot antennas; submillimeter wave technology; superconducting devices

Denna post skapades 2015-03-11.
CPL Pubid: 213632


Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik



Chalmers infrastruktur