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Comparing depth profiling of oxide scale on SOFC interconnect-materials using ToF-SIMS with Ga-69(+), Bi-3(+)/Cs+ and C-60(+)/C-60(2+) as primary and sputter ions

Josefin Hall (Institutionen för kemi och kemiteknik, Oorganisk miljökemi) ; U. Bexell ; John S. Fletcher ; Sead Canovic (Institutionen för kemi och kemiteknik, Oorganisk miljökemi) ; Per Malmberg (Institutionen för kemi och kemiteknik, Oorganisk miljökemi ; Institutionen för kemi och molekylärbiologi)
Materials at High Temperatures (0960-3409). Vol. 32 (2015), 1-2, p. 133-141.
[Artikel, refereegranskad vetenskaplig]

Oxide scale cross-sections of CeO2 coated FeCr based solid oxide fuel cell interconnect materials were examined using secondary ion mass spectrometry (SIMS) depth profiling. A duplex spinel : chromia scale was formed after 1 h at 850 degrees C. Ti and ceria were observed between these layers. Additionally, minor concentrations of Mn, Si and Nb were observed at the oxide/ metal interface. Furthermore, Al and Ti were concentrated primarily in the metal surface close to the oxide/metal interface. Secondary ion mass spectrometry sputter depth profiles using different ion sources; Ga-69(+), Bi-3(+)/Cs+ and C-60(+)/C(60)(2+)were compared with TEM oxide scale cross-section and field emission gun-Auger electron spectroscopy depth profiling. Secondary ion mass spectrometry depth profiling with Ga-69(+), Bi(3)z/Cs+ showed decreased secondary ion yields in the metallic matrix. This decrease could be avoided using oxygen flooding. The C-60 cluster ion depth profiles were less sensitive to type of matrix and gave the best correspondence to the TEM cross-section. However, the impact energy has to be high enough to avoid carbon deposition.

Nyckelord: Secondary ion mass spectrometry, Oxide scale, Depth profiling, Solid oxide fuel cell



Denna post skapades 2015-03-10. Senast ändrad 2016-08-23.
CPL Pubid: 213580

 

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Institutioner (Chalmers)

Institutionen för kemi och kemiteknik, Oorganisk miljökemi
Institutionen för kemi och molekylärbiologi (GU)

Ämnesområden

Kemiteknik
Materialteknik

Chalmers infrastruktur