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Ferroelectric varactors suitable for capacitive shunt switching and wireless sensing

Guru Subramanyam ; Andrei Vorobiev (Institutionen för mikroteknologi och nanovetenskap, Mikrovågs- och terahertzteknologi) ; Spartak Gevorgian (Institutionen för mikroteknologi och nanovetenskap, Mikrovågs- och terahertzteknologi)
(2007)
[Patentansökan]

A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. In one embodiment, the varactor shunt switch can be used as passive sensor with the capability of being wireless.



Denna post skapades 2015-02-19. Senast ändrad 2015-02-27.
CPL Pubid: 212845

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågs- och terahertzteknologi (2006-2007)

Ämnesområden

Elektroteknik och elektronik

Chalmers infrastruktur