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CAD Model for Microstrips on r-cut Sapphire Substrates

Irina Vendik ; Orest Vendik ; Spartak Gevorgian (Institutionen för mikroelektronik och nanovetenskap) ; Margarita Sitnikova ; Eva Olsson (Institutionen för experimentell fysik)
International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering Vol. 4 (1994), 4, p. 374–383.
[Artikel, refereegranskad vetenskaplig]

Simple and correct formulas are derived for calculation of an effective isotropic dielectric constant, which characterizes the wave propagation in microstrip lines on anisotropic substrates made of r-cut sapphire crystals. The r-plane is extensively used for epitaxial growth of high-Tc superconductor YBa2Cu3O7 films as applied to microwave integrated circuits. In contradistinction to previous models developed for z-cut sapphire, the nondiagonal dielectric permittivity tensor of r-cut sapphire is used. The effective dielectric constant of a microstrip line on r-cut sapphire substrate is found as a function of the strip-line geometry and the orientation of the crystallographic axes with respect to the symmetry plane of the microstrip line

Denna post skapades 2015-02-16.
CPL Pubid: 212684


Institutioner (Chalmers)

Institutionen för mikroelektronik och nanovetenskap (1900-2003)
Institutionen för experimentell fysik (1900-2005)


Elektroteknik och elektronik

Chalmers infrastruktur