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Surface impedance of silicon substrates and films

Spartak Gevorgian (Institutionen för mikroelektronik och nanovetenskap)
International Journal of RF and Microwave Computer-Aided Engineering Vol. 8 (1998), 6, p. 433-440.
[Artikel, refereegranskad vetenskaplig]

It is shown that at microwave–millimeterwave frequencies and for DC resistivities below ρ+=(2πfτε0εL)−1 silicon should be regarded as a lossy metal characterized by resistivity, skin depth, and surface impedance, while at higher resistivities it may be regarded as a lossy dielectric characterized by a lattice dielectric constant (εL=11.7) and loss tangent. The sheet resistance defined as a ratio of DC resistivity to film thickness is not an adequate parameter to characterize the films at microwave frequencies. The surface impedance of a thin semiconductor film is complex with both real and imaginary parts strongly dependent on frequency, DC resistivity of substrate and film, substrate thickness, and the presence of a ground plane on the backside of the substrate

Nyckelord: silicon MMIC;dielectric constant;surface impedance

Denna post skapades 2015-02-11.
CPL Pubid: 212399


Institutioner (Chalmers)

Institutionen för mikroelektronik och nanovetenskap (1900-2003)


Elektroteknik och elektronik

Chalmers infrastruktur