CPL - Chalmers Publication Library
| Utbildning | Forskning | Styrkeområden | Om Chalmers | In English In English Ej inloggad.

Na0.5K0.5NbO3/SiO2/Si Thin Film Varactor

Coong-Rae Cho ; Jung-Hyuk Koh ; Alex Grishin ; Saeed Abadei (Institutionen för mikroelektronik) ; Spartak Gevorgian (Institutionen för mikroelektronik och nanovetenskap)
Applied Physics Letters (0003-6951). Vol. 76 (2000), p. 1761.
[Artikel, refereegranskad vetenskaplig]

Perfectly c-axis oriented micrometer thickNa 0.5 K 0.5 NbO 3 (NKN) films have been prepared on a thermally grown ultrathinSiO 2 template layer onto a Si(001) wafer by the pulsed laser deposition technique. A x-ray diffraction θ–2θ scan reveals multiple-cell structuring of single phase NKN film along the polar axis, while filmsgrown onto amorphous ceramic (Corning) glass show a mixture of slightly c-axis oriented NKN and pyrochlore phases. This implies a small amount ofSiO 2 crystallites distributed in an amorphous matrix inherit Si(001) orientation and promotes highly oriented NKN film growth. NKN filmdielectric permittivityε ′ was found to vary from 114.0 to 107.2 in the frequency range 1 kHz–1 MHz, while the resistivity was on the order of2.6×10 10  Ω cm @ 20 kV/cm. The planar interdigital variable reactance device (varactor) based on theNKN/SiO 2 /Si thin film structure possesses a dissipation factor of 0.8% at 1 MHz and zero bias, electrical tunability of 3.1%, and nA order leakage current at 20 V bias at room temperature.

Nyckelord: ferroelectric, varactor

Denna post skapades 2015-02-11.
CPL Pubid: 212386


Institutioner (Chalmers)

Institutionen för mikroelektronik (1995-2003)
Institutionen för mikroelektronik och nanovetenskap (1900-2003)


Den kondenserade materiens fysik

Chalmers infrastruktur