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DC field dependent properties of Na0.5K0.5NbO3/SiO2/Si structures at millimeter-wave frequencies

Saeed Abadei (Institutionen för mikroelektronik) ; Spartak Gevorgian (Institutionen för mikroelektronik och nanovetenskap) ; C Cho ; Alex Grishin
Applied Physics Letters (0003-6951). Vol. 78 (2001), 13, p. 1900 - 1902 .
[Artikel, refereegranskad vetenskaplig]

Dielectric properties of laser-ablated 0.5-μm-thick c-axis epitaxial Na0.5K0.5NbO3 films on high-resistivity (7.7 Ω cm) silicon SiO2/Si substrate are studied experimentally at frequencies up to 40 GHz. For measurements, planar 0.5-μm-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of Na0.5K0.5NbO3 films. The slot width between the electrodes is 2 or 4 μm. 13% capacitance change at 40 V dc bias and Q factor more than 15 are observed at 40 GHz, which makes the structure useful for applications in electrically tunable millimeter-wave devices

Nyckelord: capacitance dielectric losses epitaxial layers ferroelectric thin films microwave materials

Denna post skapades 2015-02-10.
CPL Pubid: 212370


Institutioner (Chalmers)

Institutionen för mikroelektronik (1995-2003)
Institutionen för mikroelektronik och nanovetenskap (1900-2003)


Den kondenserade materiens fysik

Chalmers infrastruktur