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Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP1-xBix dilute bismide with x <= 0.034

J. Kopaczek ; R. Kudrawiec ; M. P. Polak ; P. Scharoch ; M. Birkett ; T. D. Veal ; K. Wang ; Y. Gu ; Q. Gong ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Applied Physics Letters (0003-6951). Vol. 105 (2014), 22,
[Artikel, refereegranskad vetenskaplig]

Contactless electroreflectance is applied to study the band gap (E-0) and spin-orbit splitting (Delta(SO)) in InP1-xBix alloys with 0 < x <= 0.034. The E-0 transition shifts to longer wavelengths very significantly (-83 meV/% Bi), while the E0 + Delta(SO) transition shifts very weakly (-13 meV/% Bi) with the rise of Bi concentration. These changes in energies of optical transitions are discussed in the context of the valence band anticrossing model and ab initio calculations. Shifts of E-0 and E-0 + Delta(SO) transitions, obtained within ab-initio calculations, are -106 and -20 meV per % Bi, respectively, which is in a good agreement with experimental results.



Denna post skapades 2015-01-09. Senast ändrad 2015-03-06.
CPL Pubid: 210359

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik

Ämnesområden

Fysik

Chalmers infrastruktur