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Electrically conductive thermal interface materials based on vertically aligned carbon nanotubes mats

J. Daon ; Shuangxi Sun (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem) ; Di Jiang (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem) ; G. Cibien ; E.M. Leveugle ; C. Galindo ; A. Ziaei ; L. Ye ; Y. Fu ; J. Bai ; Johan Liu (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem)
IEEE 20th International Workshop on Thermal Investigation of ICs and Systems (Therminic). Greenwich, London, United Kingdom, 24-26 September 2014 (2014)
[Konferensbidrag, refereegranskat]

In power microelectronics, the trends towards miniaturization and higher performances result in higher power densities and more heat to be dissipated. In most electronic assembly, thermal interface materials (TIM) help provide a path for heat dissipation but still represent a bottleneck in the total thermal resistance of the system. VA-CNTs mats are typically grown on HR silicon substrate with Al2O3 diffusion barrier layer using Thermal CVD process. In many cases, 'die attach' thermal interface materials need to be electrically conductive and the growth of dense VA-CNT mats on an electrically conductive substrate remains a challenge. This paper presents the growth of dense VA-CNT mats on doped silicon with Al2O3 and TiN diffusion barrier layer. Processes, thermal and electrical characterization of VA-CNTs based thermal interface materials are studied and reported.

Denna post skapades 2015-01-08. Senast ändrad 2015-12-07.
CPL Pubid: 210183


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Bionanosystem (2007-2015)



Chalmers infrastruktur