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Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies

Michael Winters (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Omid Habibpour (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; I. G. Ivanov ; J. Hassan ; E. Janzen ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Carbon (0008-6223). Vol. 81 (2015), p. 96-104.
[Artikel, refereegranskad vetenskaplig]

Epitaxial graphene is grown on semi-insulating (SI) 4H-SiC in a hot wall CVD reactor by graphitization and in-situ intercalation with (H)ydrogen. A holistic material characterization is performed in order to ascertain the number of layers, layer uniformity, and electron transport properties of the epi-layers via electronic test structures and Raman spectroscopy. Bilayer graphene field effect transistors (GFETs) are fabricated using a full electron beam lithography (EBL) process which is optimized for low contact resistances of r(c) < 0.2 Omega mm. Mobilities of order 2500 cm(2)/V s are achieved on bilayer samples after fabrication. The devices demonstrate high transconductance g(m) = 400 mS/mm and high current density I-ds = 1.8 A/mm. The output conductance at the bias of maximum transconductance is g(ds) = 300 mS/mm. The GFETs demonstrate an extrinsic f(t)(ext) and f(max)(ext) of 20 and 13 GHz, respectively and show 6 dB power gain at 1 GHz in a 50 Omega system, which is the highest reported to date.



Denna post skapades 2015-01-07. Senast ändrad 2015-08-10.
CPL Pubid: 209791

 

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Projekt

Denna publikation är ett resultat av följande projekt:


Graphene-Based Revolutions in ICT And Beyond (GRAPHENE) (EC/FP7/604391)