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Tunnel Magnetoresistance with Atomically Thin Two‐Dimensional Hexagonal Boron Nitride Barriers

André Dankert (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; Venkata Kamalakar Mutta (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; Abdul Wajid (Institutionen för mikroteknologi och nanovetenskap) ; Ram Shanker Patel ; Saroj Prasad Dash (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik)
Nano Research (1998-0124). Vol. 8 (2015), 4, p. 1357-1364.
[Artikel, refereegranskad vetenskaplig]

The two-dimensional atomically thin insulator hexagonal boron nitride (h-BN) constitutes a new paradigm in tunnel based devices. A large band gap, along with its atomically flat nature without dangling bonds or interface trap states, makes it an ideal candidate for tunnel spin transport in spintronic devices. Here, we demonstrate the tunneling of spin-polarized electrons through large area monolayer h-BN prepared by chemical vapor deposition in magnetic tunnel junctions. In ferromagnet/h-BN/ferromagnet heterostructures fabricated on a chip scale, we show tunnel magnetoresistance at room temperature. Measurements at different bias voltages and on multiple devices with different ferromagnetic electrodes establish the spin polarized tunneling using h-BN barriers. These results open the way for integration of 2D monolayer insulating barriers in active spintronic devices and circuits operating at ambient temperature, and for further exploration of their properties and prospects.

Nyckelord: hexagonal boron nitride, 2D layered materials, CVD, spintronics, magnetic tunnel junction, tunnel magnetoresistance, tunnel barrier

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Denna post skapades 2014-11-28. Senast ändrad 2016-08-22.
CPL Pubid: 206835


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