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Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

Venkata Kamalakar Mutta (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; André Dankert (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; Johan Bergsten (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Tommy Ive (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Saroj Prasad Dash (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik)
Applied Physics Letters (0003-6951). Vol. 105 (2014), 212405,
[Artikel, refereegranskad vetenskaplig]

Hexagonal boron nitride (h-BN) is a large bandgap insulating isomorph of graphene, ideal for atomically thin tunnel barrier applications. In this letter, we demonstrate large area chemical vapor deposited (CVD) h-BN as a promising spin tunnel barrier in graphene spin transport devices. In such structures, the ferromagnetic tunnel contacts with h-BN barrier are found to show robust tunneling characteristics over a large scale with resistances in the favorable range for efficient spin injection into graphene. The non-local spin transport and precession experiments reveal spin lifetime approximate to 500 ps and spin diffusion length approximate to 1.6 mu m in graphene with tunnel spin polarization approximate to 11% at 100 K. The electrical and spin transport measurements at different injection bias current and gate voltages confirm tunnel spin injection through h-BN barrier. These results open up possibilities for implementation of large area CVD h-BN in spintronic technologies.



Denna post skapades 2014-11-28. Senast ändrad 2015-05-28.
CPL Pubid: 206831

 

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