CPL - Chalmers Publication Library
| Utbildning | Forskning | Styrkeområden | Om Chalmers | In English In English Ej inloggad.

Electronic and magnetic properties of vanadium doped AlN nanosheet under in-plane biaxial strains

H. W. Cao ; P. F. Lu ; Z. Y. Yu ; J. Chen ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Superlattices and Microstructures (0749-6036). Vol. 73 (2014), p. 113-120.
[Artikel, refereegranskad vetenskaplig]

First-principles calculations have been performed to investigate the electronic and magnetic properties of V-doped AlN nanosheet under in-plane biaxial strains. It is found that V atom favors to substitute for Al site with the lowest formation energy. The magnetic coupling of three different configurations are studied and configuration I is demonstrated to possess room temperature ferromagnetism. The stable ferromagnetic coupling is mediated by double exchange mechanism. In addition, the in-plane biaxial strains corresponding to tensile and compressive strains can affect and manipulate the magnetic interaction of V-doped AlN nanosheet in different ways. These results are conductive to design AlN based two dimensional diluted magnetic semiconductors.

Nyckelord: AlN nanosheet, Magnetic properties, Biaxial strains, First-principles, Spintronic, ZNO, 1ST-PRINCIPLES, CR

Denna post skapades 2014-11-06.
CPL Pubid: 205391


Läs direkt!

Länk till annan sajt (kan kräva inloggning)

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik



Chalmers infrastruktur